IRFBG20
MOSFET N-CH 1000V 1.4A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBG20, a high-voltage N-Channel Power MOSFET, offers a 1000 V drain-source breakdown voltage and 1.4 A continuous drain current at 25°C. This through-hole component, housed in a TO-220AB package, features a maximum on-resistance of 11 Ohms at 840 mA and 10 V gate-source voltage. Key parameters include a gate charge of 38 nC at 10 V and input capacitance of 500 pF at 25 V. With a maximum power dissipation of 54 W (Tc) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for power supply, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 11Ohm @ 840mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
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