IRFBF30S
MOSFET N-CH 900V 3.6A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBF30S is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source On-State Resistance (Rds(on)) of 3.7 Ohms maximum at a continuous drain current of 2.2A and a gate-source voltage of 10V. With a Drain-Source Voltage (Vdss) of 900V and a continuous drain current capability of 3.6A (Tc), it offers robust performance. The device dissipates up to 125W (Tc) and has a gate charge of 78 nC maximum at 10V. The input capacitance (Ciss) is 1200 pF maximum at 25V. This MOSFET is housed in a TO-263-3, D2PAK (TO-263AB) surface-mount package, suitable for demanding power supply and industrial applications. Operating temperature ranges from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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