IRFBF20S
MOSFET N-CH 900V 1.7A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFBF20S is a high-voltage N-Channel Power MOSFET designed for robust switching applications. This device features a maximum drain-source voltage (Vdss) of 900V and a continuous drain current (Id) of 1.7A at 25°C (Tc). With an Rds(On) of 8 Ohm maximum at 1A and 10V gate-source voltage, it offers efficient power handling. The MOSFET is housed in a TO-263-3, D2PAK surface-mount package, facilitating integration into compact circuit designs. Key parameters include a gate charge (Qg) of 38 nC maximum at 10V and an input capacitance (Ciss) of 490 pF maximum at 25V. Power dissipation capabilities are rated at 3.1W (Ta) and 54W (Tc). This component is suitable for use in power supply units, industrial motor control, and lighting applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 54W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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