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IRFBF20L

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IRFBF20L

MOSFET N-CH 900V 1.7A I2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFBF20L is a high-voltage N-Channel Power MOSFET designed for demanding power switching applications. This component features a maximum drain-source voltage (Vdss) of 900V and a continuous drain current (Id) of 1.7A at 25°C (Tc). With a low Rds(on) of 8 Ohm maximum at 1A and 10V gate drive, it offers efficient power transfer. Key parameters include a gate charge (Qg) of 38 nC maximum at 10V and an input capacitance (Ciss) of 490 pF maximum at 25V. The device boasts a maximum power dissipation of 54W (Tc) and is housed in a TO-262-3 Long Leads, I2PAK package for through-hole mounting. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for use in power supply units, industrial motor control, and lighting applications where robust high-voltage switching is required.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Rds On (Max) @ Id, Vgs8Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageI2PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)900 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V

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