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IRFBF20

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IRFBF20

MOSFET N-CH 900V 1.7A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFBF20, an N-Channel Power MOSFET, offers a robust 900V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 1.7A at 25°C (Tc). With a maximum power dissipation of 54W (Tc) and a low on-resistance of 8 Ohm at 1A and 10V gate drive, this component is optimized for efficiency in high-voltage applications. The TO-220AB package facilitates easy through-hole mounting. Key parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 490 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This device finds application in power supply circuits and high-voltage switching applications across various industrial sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Rds On (Max) @ Id, Vgs8Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)54W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)900 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V

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