IRFBF20
MOSFET N-CH 900V 1.7A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRFBF20, an N-Channel Power MOSFET, offers a robust 900V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 1.7A at 25°C (Tc). With a maximum power dissipation of 54W (Tc) and a low on-resistance of 8 Ohm at 1A and 10V gate drive, this component is optimized for efficiency in high-voltage applications. The TO-220AB package facilitates easy through-hole mounting. Key parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 490 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This device finds application in power supply circuits and high-voltage switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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