IRFBE30S
MOSFET N-CH 800V 4.1A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBE30S is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source breakdown voltage (Vdss) of 800 V and a continuous drain current (Id) of 4.1 A at 25°C (Tc). The low on-resistance (Rds On) of 3 Ohms is specified at 2.5 A and 10 V Vgs. With a maximum power dissipation of 125 W (Tc), this MOSFET is suitable for demanding power conversion circuits. Key parameters include a gate charge (Qg) of 78 nC at 10 V and an input capacitance (Ciss) of 1300 pF at 25 V. The device is housed in a TO-263 (D2PAK) surface-mount package, facilitating efficient thermal management and board integration. Typical applications for the IRFBE30S include high-voltage power supplies, lighting, and industrial motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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