IRFBE30L
MOSFET N-CH 800V 4.1A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFBE30L is an N-Channel Power MOSFET designed for high-voltage applications. This component features a high breakdown voltage of 800V (Vdss) and a continuous drain current capability of 4.1A (Tc) at 25°C, with a maximum power dissipation of 125W (Tc). The device offers a low on-resistance (Rds On) of 3 Ohm maximum at 2.5A and 10V Vgs. Key parameters include a gate charge of 78 nC (Max) @ 10V and input capacitance of 1300 pF (Max) @ 25V. The IRFBE30L is housed in an I2PAK package (TO-262-3 Long Leads, I2PAK, TO-262AA) suitable for through-hole mounting. This component finds application in power supply units, lighting control, and motor drive circuits. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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