IRFBE20S
MOSFET N-CH 800V 1.8A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRFBE20S is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 1.8 A at 25°C. The on-resistance (Rds On) is specified at a maximum of 6.5 Ohms at 1.1 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 38 nC (max) at 10 V and Input Capacitance (Ciss) of 530 pF (max) at 25 V. The IRFBE20S is housed in a TO-263-3, D2PAK surface-mount package, suitable for demanding thermal environments with an operating temperature range of -55°C to 150°C. This component is utilized in power supply units, lighting, and motor control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220AB
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
