IRFBE20
MOSFET N-CH 800V 1.8A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBE20 is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 800 V and a continuous Drain current (Id) of 1.8 A at 25°C. The Rds On is specified at a maximum of 6.5 Ohms at 1.1 A and 10 V gate drive. With a gate charge (Qg) of 38 nC at 10 V and input capacitance (Ciss) of 530 pF at 25 V, it is suitable for switching applications. The device offers a maximum power dissipation of 54W (Tc) and operates within a temperature range of -55°C to 150°C. Packaged in a TO-220AB through-hole configuration, the IRFBE20 is utilized in power supply, lighting, and industrial control sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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