IRFBC40STRL
MOSFET N-CH 600V 6.2A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBC40STRL is an N-Channel power MOSFET designed for demanding applications. This device features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 6.2A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.2Ohm at 3.7A and 10V Vgs, it offers efficient switching performance. The device is housed in a TO-263-3, D2PAK package for surface mounting, providing excellent thermal management with power dissipation capabilities of 130W (Tc). Key electrical parameters include a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 1300 pF at 25V. The IRFBC40STRL is suitable for use in power supply, motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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