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IRFBC40S

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IRFBC40S

MOSFET N-CH 600V 6.2A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFBC40S is an N-Channel Power MOSFET designed for high-voltage switching applications. This device features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 6.2 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 1.2 Ohm at 3.7 A and 10 V gate drive. With a gate charge (Qg) of 60 nC at 10 V and input capacitance (Ciss) of 1300 pF at 25 V, it is suitable for efficient power conversion. The device offers a maximum power dissipation of 3.1 W (Ta) and 130 W (Tc). Packaged in a TO-263-3, D2PAK surface-mount package, the IRFBC40S is utilized in industrial power supplies, lighting, and motor control applications. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.2A (Tc)
Rds On (Max) @ Id, Vgs1.2Ohm @ 3.7A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V

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