IRFBC40L
MOSFET N-CH 600V 6.2A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBC40L is an N-Channel power MOSFET designed for high-voltage switching applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 6.2A at 25°C (Tc). The Rds(On) is specified at a maximum of 1.2 Ohms at 3.7A and 10V gate drive. With a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 1300 pF at 25V, it offers efficient switching characteristics. The device is packaged in an I2PAK (TO-262-3 Long Leads) for through-hole mounting. Power dissipation capabilities include 3.1W (Ta) and 130W (Tc). Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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