IRFBC40AS
MOSFET N-CH 600V 6.2A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFBC40AS is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 6.2A at 25°C (Tc). With a maximum power dissipation of 125W (Tc) and an Rds On of 1.2Ohm at 3.7A and 10V Vgs, it offers efficient switching performance. The device utilizes Metal Oxide technology and is housed in a TO-263 (D2PAK) surface mount package. Key electrical parameters include a maximum Gate Charge (Qg) of 42 nC at 10V and an input capacitance (Ciss) of 1036 pF at 25V. The operating temperature range is -55°C to 150°C. This MOSFET is commonly found in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1036 pF @ 25 V |
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