IRFBC40AL
MOSFET N-CH 600V 6.2A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBC40AL is a 600V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current (Id) of 6.2A at 25°C (Tc) and a low on-resistance (Rds(on)) of 1.2 Ohm maximum at 3.7A, 10V. The gate charge (Qg) is 42 nC maximum at 10V, and the input capacitance (Ciss) is 1036 pF maximum at 25V. It operates with a gate-source voltage (Vgs) range of ±30V and a threshold voltage (Vgs(th)) of 4V maximum at 250µA. The IRFBC40AL is housed in an I2PAK (TO-262-3 Long Leads) through-hole package, suitable for power supply regulation, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1036 pF @ 25 V |
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