IRFBC40A
MOSFET N-CH 600V 6.2A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBC40A is a N-Channel Power MOSFET designed for demanding applications in power supply, industrial motor control, and lighting sectors. This through-hole component features a 600V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 6.2A at 25°C (Tc). The device boasts a low on-resistance (Rds On) of 1.2 Ohm maximum at 3.7A and 10V gate drive voltage. Maximum power dissipation is rated at 125W (Tc). Key parameters include a gate charge (Qg) of 42 nC maximum at 10V and input capacitance (Ciss) of 1036 pF maximum at 25V. The TO-220AB package ensures robust thermal performance, operating within a temperature range of -55°C to 150°C. The Vishay Siliconix IRFBC40A utilizes advanced MOSFET technology for efficient power conversion.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1036 pF @ 25 V |
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