IRFBC30STRLPBF
MOSFET N-CH 600V 3.6A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBC30STRLPBF is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 600V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 3.6A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 2.2 Ohms at 2.2A and 10V Vgs. With a gate charge (Qg) of 31 nC (max) at 10V Vgs and an input capacitance (Ciss) of 660 pF (max) at 25V Vds, it is suitable for various switching applications. The TO-263 (D2PAK) surface mount package offers a robust thermal performance with a maximum power dissipation of 74W (Tc). This MOSFET is commonly utilized in industrial power supplies, lighting, and motor control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
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