IRFBC30S
MOSFET N-CH 600V 3.6A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBC30S is a 600V N-Channel Power MOSFET engineered for demanding applications across industrial, automotive, and consumer electronics sectors. This TO-263 (D2PAK) surface mount device offers a continuous drain current of 3.6A (Tc) and a low on-resistance of 2.2 Ohm maximum at 2.2A and 10V gate drive. Key electrical parameters include a gate charge of 31 nC at 10V and an input capacitance (Ciss) of 660 pF at 25V. The device supports a maximum junction temperature of 150°C and a drain-to-source voltage (Vdss) of 600V, with a ±20V maximum gate-source voltage. Power dissipation is rated at 74W (Tc) and 3.1W (Ta).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
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