IRFBC30PBF-BE3
MOSFET N-CH 600V 3.6A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFBC30PBF-BE3 is an N-Channel Power MOSFET designed for high-voltage applications. Featuring a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 3.6 A at 25°C, this component offers a maximum On-Resistance (Rds On) of 2.2 Ohms at 2.2 A and 10 V gate drive. With a Gate Charge (Qg) of 31 nC at 10 V and Input Capacitance (Ciss) of 660 pF at 25 V, it provides efficient switching characteristics. The device supports a maximum Gate-Source Voltage (Vgs) of ±20 V and a Threshold Voltage (Vgs(th)) of 4V. Its TO-220AB through-hole package allows for a maximum power dissipation of 74 W (Tc) and an operating temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supply, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |