IRFBC30L
MOSFET N-CH 600V 3.6A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFBC30L is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 3.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2.2 Ohms at 2.2A and 10V Vgs, it offers efficient power handling. The device is housed in an I2PAK package, suitable for through-hole mounting, and supports a wide operating temperature range from -55°C to 150°C. Key parameters include a gate charge (Qg) of 31 nC at 10V and input capacitance (Ciss) of 660 pF at 25V. Maximum power dissipation is rated at 74W (Tc) and 3.1W (Ta). This MOSFET is commonly utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
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