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IRFBC30ASTRRPBF

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IRFBC30ASTRRPBF

MOSFET N-CH 600V 3.6A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-Channel IRFBC30ASTRRPBF. This TO-263 (D2PAK) surface mount device features a 600 V drain-to-source voltage (Vdss) and a continuous drain current of 3.6 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 2.2 Ohms at 2.2 A and 10 V gate-to-source voltage (Vgs). With a maximum power dissipation of 74 W (Tc) and a gate charge of 23 nC at 10 V, this MOSFET is suitable for applications requiring high voltage switching. Operating temperature range is -55°C to 150°C (TJ). The input capacitance (Ciss) is a maximum of 510 pF at 25 V. This component is commonly utilized in power supply, industrial, and automotive applications. Packaged in a Tape & Reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Rds On (Max) @ Id, Vgs2.2Ohm @ 2.2A, 10V
FET Feature-
Power Dissipation (Max)74W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds510 pF @ 25 V

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