IRFBC30ASTRL
MOSFET N-CH 600V 3.6A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBC30ASTRL is an N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-source breakdown voltage (Vdss) of 600V and a continuous drain current (Id) capability of 3.6A at 25°C (Tc). The Rds(on) is specified at a maximum of 2.2 Ohms when driven at 10V Vgs and sourcing 2.2A Id. With a gate charge (Qg) of 23 nC (max) at 10V Vgs and input capacitance (Ciss) of 510 pF (max) at 25V Vds, it offers efficient switching characteristics. The MOSFET is housed in a TO-263-3, D2PAK surface-mount package, facilitating integration into compact designs. Its maximum power dissipation is rated at 74W (Tc). This component is suitable for use in power supply, lighting, and industrial automation sectors. The device operates across a temperature range of -55°C to 150°C (TJ). It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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