IRFBC30AL
MOSFET N-CH 600V 3.6A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBC30AL is an N-channel power MOSFET designed for high voltage applications. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 3.6A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 2.2 Ohms at 2.2A and 10V gate-source voltage. With a maximum power dissipation of 74W (Tc) and a gate charge (Qg) of 23 nC at 10V, this MOSFET is suitable for power supply units, lighting, and motor control applications. The device is housed in an I2PAK package, offering through-hole mounting. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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