IRFBC30
MOSFET N-CH 600V 3.6A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBC30 is a N-Channel Power MOSFET designed for high voltage applications. This through-hole component features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 3.6A at 25°C. With a maximum on-resistance (Rds On) of 2.2 Ohms at 2.2A and 10V Vgs, it offers efficient switching performance. The device has a gate charge (Qg) of 31 nC maximum at 10V and an input capacitance (Ciss) of 660 pF maximum at 25V. Rated for 74W power dissipation at 25°C case temperature and operating from -55°C to 150°C, the IRFBC30 is packaged in a standard TO-220AB. This MOSFET is suitable for power supply designs, motor control, and general-purpose switching in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
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