IRFBC20S
MOSFET N-CH 600V 2.2A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFBC20S is an N-Channel Power MOSFET designed for high-voltage applications. This device features a 600V drain-to-source breakdown voltage and a continuous drain current capability of 2.2A at 25°C (Tc). The IRFBC20S offers a low on-resistance of 4.4 Ohms maximum at 1.3A and 10V gate drive. With a maximum gate charge of 18 nC at 10V, it ensures efficient switching performance. The component is housed in a TO-263 (D2PAK) surface-mount package, suitable for automated assembly. Its power dissipation ratings are 3.1W (Ta) and 50W (Tc), and it operates within a temperature range of -55°C to 150°C. Applications for this MOSFET include power supplies, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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