IRFBC20LPBF
MOSFET N-CH 600V 2.2A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFBC20LPBF is a 600V N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a TO-262-3 package with long leads, offering a continuous drain current of 2.2A at 25°C (Tc) and a maximum Rds On of 4.4 Ohm at 1.3A and 10V gate drive. Key electrical characteristics include a Vgs(th) of 4V (max) at 250µA, an input capacitance (Ciss) of 350pF (max) at 25V, and a gate charge (Qg) of 18nC (max) at 10V. The device supports a maximum gate-source voltage (Vgs) of ±20V and operates within an extended temperature range of -55°C to 150°C (TJ). With a maximum power dissipation of 50W (Tc) and 3.1W (Ta), the IRFBC20LPBF is suitable for use in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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