IRFBA22N50APBF
MOSFET N-CH 500V 24A SUPER-220Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRFBA22N50APBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 24A at 25°C (Tc). The device offers a low on-resistance of 230mOhm maximum at 13.8A and 10V gate drive. With a maximum power dissipation of 340W (Tc) and a gate charge (Qg) of 115 nC, it is suitable for demanding applications. The IRFBA22N50APBF is housed in a Through Hole SUPER-220™ (TO-273AA) package, facilitating robust board mounting. Typical applications include power supplies, motor control, and industrial power systems. It operates within an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | Super-220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 13.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 340W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SUPER-220™ (TO-273AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220AB
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
