IRFB9N65APBF
MOSFET N-CH 650V 8.5A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFB9N65APBF offers a 650V drain-source voltage (Vdss) and a continuous drain current (Id) of 8.5A at 25°C (Tc). This TO-220AB packaged device features a maximum power dissipation of 167W (Tc) and a gate charge (Qg) of 48nC at 10V. The Rds On is rated at a maximum of 930mOhm at 5.1A and 10V. Input capacitance (Ciss) is 1417pF maximum at 25V. Designed for through-hole mounting, this MOSFET operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supply and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 930mOhm @ 5.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1417 pF @ 25 V |
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