IRFB9N65A
MOSFET N-CH 650V 8.5A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFB9N65A is a 650V N-Channel Power MOSFET designed for high-voltage applications. This device offers a continuous drain current of 8.5A at 25°C and a maximum power dissipation of 167W (Tc). Key electrical characteristics include a Drain-Source On Resistance (Rds On) of 930mOhm at 5.1A and 10V, with a gate threshold voltage (Vgs(th)) of 4V at 250µA. The input capacitance (Ciss) is rated at a maximum of 1417pF at 25V, and the gate charge (Qg) is 48nC at 10V. The Vishay Siliconix IRFB9N65A is housed in a TO-220AB package, suitable for through-hole mounting and operating in a temperature range of -55°C to 150°C (TJ). This component is utilized in power supply, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 930mOhm @ 5.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1417 pF @ 25 V |
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