IRFB9N60A
MOSFET N-CH 600V 9.2A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFB9N60A is a 600V N-Channel Power MOSFET designed for high-speed switching applications. This through-hole component, packaged in a TO-220AB, offers a continuous drain current of 9.2A (Tc) and a maximum power dissipation of 170W (Tc). Key electrical characteristics include a drain-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 750mOhm at 5.5A and 10V gate drive, and a gate charge (Qg) of 49nC at 10V. The input capacitance (Ciss) is specified at a maximum of 1400pF at 25V. This MOSFET is suitable for use in industrial power supplies, motor control, and lighting applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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