IRFB9N30APBF
MOSFET N-CH 300V 9.3A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number IRFB9N30APBF. This device features a 300V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9.3A at 25°C. The Rds On is specified at a maximum of 450mOhm at 5.6A and 10V gate drive. With a gate charge (Qg) of 33 nC at 10V and an input capacitance (Ciss) of 920 pF at 25V, this MOSFET is designed for efficient switching. The device offers a maximum power dissipation of 96W and operates across a temperature range of -55°C to 150°C. Packaged in a TO-220AB through-hole configuration, the IRFB9N30APBF is suitable for applications in power supply units, motor control, and industrial automation. The maximum gate-source voltage (Vgs) is ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V |
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