IRFB18N50KPBF
MOSFET N-CH 500V 17A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFB18N50KPBF is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 17A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 290 mOhm at 10A and 10V, with a Gate-Source Voltage (Vgs) range of ±30V. Key electrical parameters include a maximum Gate Charge (Qg) of 120 nC at 10V and an input capacitance (Ciss) of 2830 pF at 25V. With a maximum power dissipation of 220W (Tc), this MOSFET is housed in a TO-220AB package suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This device is utilized in power conversion, motor control, and power supply industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 220W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2830 pF @ 25 V |
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