IRFB17N60KPBF
MOSFET N-CH 600V 17A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFB17N60KPBF is a 600V N-Channel Power MOSFET designed for high-efficiency power switching applications. This through-hole component, housed in a TO-220AB package, offers a continuous drain current of 17A at 25°C and a maximum power dissipation of 340W (Tc). Key electrical characteristics include a drain-source on-resistance (Rds On) of 420mOhm at 10A and 10V, and a gate charge (Qg) of 99nC at 10V. The input capacitance (Ciss) is rated at 2700pF at 25V. This device is suitable for use in power supplies, motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C (TJ) and has a Vgs(th) of 5V at 250µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 340W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
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