IRFB17N60K
MOSFET N-CH 600V 17A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number IRFB17N60K, is a 600V device with a continuous drain current of 17A at 25°C. This through-hole TO-220AB packaged component offers a maximum power dissipation of 340W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 420mOhm at 10A and 10V, and a gate charge (Qg) of 99 nC at 10V. The input capacitance (Ciss) is a maximum of 2700 pF at 25V. Operating temperature ranges from -55°C to 150°C. This device is suitable for applications in industrial power supplies, motor control, and lighting.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 340W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
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