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IRFB17N50L

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IRFB17N50L

MOSFET N-CH 500V 16A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRFB17N50L is an N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 16A at 25°C. With a maximum power dissipation of 220W (Tc), it is suitable for demanding power conversion circuits. The IRFB17N50L offers a low on-resistance (Rds On) of 320mOhm maximum at 9.9A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 130 nC maximum at 10V and input capacitance (Ciss) of 2760 pF maximum at 25V. This component is housed in a TO-220AB package, facilitating through-hole mounting. It is commonly employed in power supplies, industrial motor control, and lighting applications. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Rds On (Max) @ Id, Vgs320mOhm @ 9.9A, 10V
FET Feature-
Power Dissipation (Max)220W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2760 pF @ 25 V

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