IRFB17N50L
MOSFET N-CH 500V 16A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFB17N50L is an N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 16A at 25°C. With a maximum power dissipation of 220W (Tc), it is suitable for demanding power conversion circuits. The IRFB17N50L offers a low on-resistance (Rds On) of 320mOhm maximum at 9.9A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 130 nC maximum at 10V and input capacitance (Ciss) of 2760 pF maximum at 25V. This component is housed in a TO-220AB package, facilitating through-hole mounting. It is commonly employed in power supplies, industrial motor control, and lighting applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 9.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 220W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2760 pF @ 25 V |
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