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IRFB16N60LPBF

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IRFB16N60LPBF

MOSFET N-CH 600V 16A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRFB16N60LPBF is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 16A at 25°C (Tc). With a maximum power dissipation of 310W (Tc), it offers robust performance. The Rds On is specified at 460mOhm maximum at 9A drain current and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 100 nC maximum at 10V and input capacitance (Ciss) of 2720 pF maximum at 25V. The device utilizes TO-220AB packaging for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies and industrial motor control applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Rds On (Max) @ Id, Vgs460mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)310W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2720 pF @ 25 V

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