IRFB16N60LPBF
MOSFET N-CH 600V 16A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFB16N60LPBF is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 16A at 25°C (Tc). With a maximum power dissipation of 310W (Tc), it offers robust performance. The Rds On is specified at 460mOhm maximum at 9A drain current and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 100 nC maximum at 10V and input capacitance (Ciss) of 2720 pF maximum at 25V. The device utilizes TO-220AB packaging for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2720 pF @ 25 V |
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