IRFB16N50KPBF
MOSFET N-CH 500V 17A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFB16N50KPBF is a 500V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This through-hole TO-220AB packaged device offers a continuous drain current of 17A at 25°C and a maximum power dissipation of 280W. With a low on-resistance of 350mOhm at 10A and 10V Vgs, it minimizes conduction losses. Key parameters include a gate charge of 89 nC (max) at 10V and input capacitance of 2210 pF (max) at 25V. The Vishay Siliconix IRFB16N50KPBF is suitable for use in power supplies, automotive systems, and industrial motor control. It operates over a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
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