IRFB16N50K
MOSFET N-CH 500V 17A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFB16N50K. This device features a 500 V drain-source breakdown voltage and a continuous drain current of 17 A at 25°C (Tc). With a maximum power dissipation of 280 W (Tc), it utilizes MOSFET technology. The Rds On is specified at 350 mOhm maximum, with a gate-source drive voltage of 10 V. Key parameters include a gate charge of 89 nC (max) at 10 V and input capacitance of 2210 pF (max) at 25 V. The device is housed in a TO-220AB package with through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for applications in power supply, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
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