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IRFB16N50K

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IRFB16N50K

MOSFET N-CH 500V 17A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-Channel IRFB16N50K. This device features a 500 V drain-source breakdown voltage and a continuous drain current of 17 A at 25°C (Tc). With a maximum power dissipation of 280 W (Tc), it utilizes MOSFET technology. The Rds On is specified at 350 mOhm maximum, with a gate-source drive voltage of 10 V. Key parameters include a gate charge of 89 nC (max) at 10 V and input capacitance of 2210 pF (max) at 25 V. The device is housed in a TO-220AB package with through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for applications in power supply, motor control, and industrial power systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Rds On (Max) @ Id, Vgs350mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)280W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2210 pF @ 25 V

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