IRFB13N50APBF
MOSFET N-CH 500V 14A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFB13N50APBF features a 500V drain-source voltage and a continuous drain current of 14A at 25°C (Tc). This through-hole component, housed in a TO-220AB package, offers a maximum power dissipation of 250W (Tc). The device exhibits a typical Rds On of 450mOhm at 8.4A and 10V gate-source voltage. With a gate charge of 81 nC at 10V and input capacitance of 1910 pF at 25V, the IRFB13N50APBF is suitable for applications requiring high voltage switching. Operating temperature range is -55°C to 150°C (TJ). This component is utilized in power supply and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1910 pF @ 25 V |
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