IRFB13N50A
MOSFET N-CH 500V 14A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFB13N50A is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) capability of 14 A at 25°C. The Rds On is specified at a maximum of 450 mOhm at 8.4 A and 10 V gate drive. With a maximum power dissipation of 250 W at the case temperature, this device is suitable for demanding power switching circuits. The input capacitance (Ciss) is 1910 pF at 25 V, and the gate charge (Qg) is 81 nC at 10 V. The IRFB13N50A is housed in a TO-220AB through-hole package, facilitating ease of mounting. This MOSFET is commonly utilized in power supplies, motor control, and industrial automation sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1910 pF @ 25 V |
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