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IRFB11N50A

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IRFB11N50A

MOSFET N-CH 500V 11A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFB11N50A is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 500 V drain-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C, with a maximum power dissipation of 170W (Tc). The device exhibits a low on-resistance (Rds On) of 520mOhm at 6.6A and 10V gate drive, and a gate charge (Qg) of 52 nC at 10V. Its robust construction includes a TO-220AB package for through-hole mounting, operating across a temperature range of -55°C to 150°C (TJ). The IRFB11N50A finds application in power supplies, motor control, and lighting systems where reliable high-voltage switching is critical.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs520mOhm @ 6.6A, 10V
FET Feature-
Power Dissipation (Max)170W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1423 pF @ 25 V

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