IRF9Z34STRL
MOSFET P-CH 60V 18A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9Z34STRL is a P-Channel Power MOSFET featuring a 60V drain-source breakdown voltage and 18A continuous drain current at 25°C. This device offers a low on-resistance of 140mOhm maximum at 11A and 10V Vgs. The TO-263 (D2PAK) package facilitates efficient surface mounting. Key parameters include a gate charge of 34 nC (max) at 10V and input capacitance of 1100 pF (max) at 25V. Maximum power dissipation is 3.7W (Ta) and 88W (Tc). The operating temperature range is -55°C to +175°C. This component is utilized in various power management applications, including automotive and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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