IRF9Z34S
MOSFET P-CH 60V 18A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9Z34S is a P-channel Power MOSFET in a TO-263 (D2PAK) surface-mount package. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 18A at 25°C. The Rds(On) is specified at a maximum of 140mOhm at 11A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 34 nC at 10V and an Input Capacitance (Ciss) of 1100 pF at 25V. Power dissipation is rated at 88W (Tc) and 3.7W (Ta). The operating temperature range for this MOSFET is -55°C to 175°C (TJ). This component is suitable for applications in power management and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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