IRF9Z34
MOSFET P-CH 60V 18A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9Z34, a P-Channel Power MOSFET, features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 18A at 25°C. This through-hole component is housed in a TO-220AB package, offering a maximum power dissipation of 88W at 25°C. Key specifications include a low on-resistance (Rds On) of 140mOhm at 11A and 10V, and a gate charge (Qg) of 34nC at 10V. The input capacitance (Ciss) is a maximum of 1100pF at 25V. Operating temperature ranges from -55°C to 175°C. This device is suitable for applications in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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