IRF9Z30
MOSFET P-CH 50V 18A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9Z30 is a P-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 18A at 25°C (Tc). With a maximum power dissipation of 74W (Tc), it is suitable for demanding power management tasks. The Rds On is specified at a maximum of 140mOhm when driven at 10V with an Id of 9.3A. Key parameters include a Gate Charge (Qg) of 39 nC (max) at 10V and input capacitance (Ciss) of 900 pF (max) at 25V. The operating temperature range is from -55°C to 150°C (TJ). This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and consumer electronics where robust power switching is required. The component is supplied in a TO-220AB package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 9.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |