IRF9Z24STRR
MOSFET P-CH 60V 11A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, part number IRF9Z24STRR, offers a 60V drain-source voltage and a continuous drain current of 11A at 25°C (Tc). This surface mount device, packaged in a TO-263 (D2PAK) configuration, features a maximum on-resistance of 280mOhm at 6.6A and 10V gate-source voltage. With a gate charge of 19 nC at 10V and input capacitance of 570 pF at 25V, the IRF9Z24STRR is suitable for applications requiring efficient power switching. Its maximum power dissipation is rated at 3.7W (Ta) and 60W (Tc). The operating temperature range is -55°C to 175°C. This component finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
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