IRF9Z24
MOSFET P-CH 60V 11A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF9Z24 is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 11A at 25°C. With a maximum Rds(On) of 280mOhm at 6.6A and 10V Vgs, it offers efficient switching characteristics. The device has a maximum power dissipation of 60W (Tc) and a gate charge (Qg) of 19nC at 10V. Its input capacitance (Ciss) is 570pF at 25V. The IRF9Z24 is housed in a TO-220AB package, facilitating through-hole mounting. It operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in power management, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
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