IRF9Z14L
MOSFET P-CH 60V 6.7A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9Z14L is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 6.7A at 25°C (Tc). With a maximum Rds(On) of 500mOhm at 4A and 10V gate drive, it ensures efficient power handling. The device offers a maximum power dissipation of 43W at 25°C (Tc) and 3.7W at 25°C (Ta). It is packaged in an I2PAK (TO-262-3 Long Leads, I2PAK, TO-262AA) for through-hole mounting. Key parameters include a gate charge (Qg) of 12 nC at 10V and an input capacitance (Ciss) of 270 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial and automotive power management circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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