IRF9Z14
MOSFET P-CH 60V 6.7A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRF9Z14 is a P-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 6.7A at 25°C (Tc). The Rds(On) is specified at a maximum of 500mOhm at 4A and 10V Vgs. With a gate charge (Qg) of 12 nC maximum at 10V Vgs and input capacitance (Ciss) of 270 pF maximum at 25V Vds, this MOSFET offers efficient switching characteristics. The device is housed in a TO-220AB package for through-hole mounting and has a maximum power dissipation of 43W (Tc). Operating temperature range is -55°C to 175°C (TJ). Key parameters include a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. This component is commonly utilized in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
SQA444CEJW-T1_GE3
AUTOMOTIVE N-CHANNEL 60 V (D-S)
