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IRF9640STRL

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IRF9640STRL

MOSFET P-CH 200V 11A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF9640STRL is a P-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 11A at 25°C (Tc). The Rds On (Max) is specified at 500mOhm with a gate-source voltage (Vgs) of 10V and drain current (Id) of 6.6A. Key parameters include a gate charge (Qg) of 44 nC (Max) at 10V and input capacitance (Ciss) of 1200 pF (Max) at 25V. With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V (Max) at 250µA, this MOSFET offers robust control. The device is housed in a TO-263-3, D2PAK package, suitable for surface mounting. Power dissipation capabilities are 3W (Ta) and 125W (Tc). This component finds application in power supply, motor control, and lighting industries. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 6.6A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V

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