IRF9640L
MOSFET P-CH 200V 11A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9640L is a P-Channel Power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 11A at 25°C (Tc). The low on-resistance of 500mOhm at 6.6A and 10V gate drive voltage (Vgs) minimizes conduction losses. Key parameters include a maximum gate charge (Qg) of 44 nC and input capacitance (Ciss) of 1200 pF at 25V. The MOSFET offers a maximum power dissipation of 3W (Ta) and 125W (Tc). Packaged in an I2PAK (TO-262-3 Long Leads) with through-hole mounting, it operates across a wide temperature range of -55°C to 150°C (TJ). This component is suitable for use in power supplies, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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